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Workshop on Substrate Current Effects in Smart-Power and Mixed-Signal ASICs
Cork, Ireland
September 14, 2000
Presentations
Invited Talk: Why Bother about Substrate Currents?. Risks of Substrate Current in Smart Power Chips (PDF,  2098 kB) R. Minixhofer AMS
SUBSAFE Overview  (PDF, 109 kB) W. Wilkening Robert Bosch
3-D Device Simulation, Measurement and Calibration (PDF, 301 kB) P. Pfäffli ISE AG
Simplification of Power Stages Topology (PDF, 2778 kB) M. Schenkel ETHZ
Transient Simulation of Potential Distribution (PDF, 495 kB) S. Mettler Robert Bosch
A Simple Model of Digital Noise Injection for Mixed-Signal Design in Digital CMOS Technology (PDF, 1108 kB) V. Liberali
R.Rossi
G. Torrelli
H. Casier
U. of Pavia
U. of Pavia
U. of Pavia
Alcatel Microelectronics
A Design Experiment for Measuring and Modeling Digital Substrate Noise Generation (PDF, 1436 kB) M. van Heijningen IMEC
Substrate Noise Induced Locking of VCOs: Simulation and Circuit Development (PDF, 217 kB) M. Daly Analog Devices

 
Why Bother about Substrate Currents?. Risks of Substrate Current in Smart Power Chips (PDF,  2098 kB)
 
A brief description of the past and present situation regarding computational and theoretical possibilities for analyzing substrate effects is given. Some Tools for substrate current analysis are discussed. The advantages and limitations of these tools are outlined. Some characteristic examples in the field of ASIC applications are introduced, revealing the benefits of carrying out substrate current analysis.
SUBSAFE Overview  (PDF, 109 kB)
The project objective, development of a simulation-guided design methodology to assure ASIC funtion under substrate current injection from power devices, will be detailed. Specific challenges, approach, expected project results and intended exploitation will be presented.

3-D Device Simulation, Measurement and Calibration  (PDF, 301 kB)

In this talk simplified device simulations of larger regions, up to an entire chip will be presented. The talk starts with a presentation of the calibration procedure of the electron recombination lifetime. A comparison of measurement of a parasitic npn transistor with its 3D device simulation will be shown. Then a 3D device simulation of the potential distribution after electron injection into the p-substrate at the low side of an H-bridge will be presented and the influence of temperature on the distribution will be investigated.
Simplification of Power Stages Topology  (PDF, 2778 kB)

Power MOS transistors, being the source of parasitic substrate currents, are of large and complex structure. To simulate full chip scale 3D current and potential distribution within reasonable CPU time and memory allocation, the topology of the structure has to be simplified. A simplification procedure for the injecting transistors will be presented and validated with measurements. A full chip scale 3D potential distribution simulation will be compared to measurements and will show the validity of the simplification.

Transient Simulation of Potential Distribution  (PDF, 495 kB)
Switching power stages are the reason for carrier injection into the substrate. By means of transient 3D device simulations the resulting potential distribution can be evaluated on full chip level. The dynamic potential spread in the substrate will be presented by short movies. The influence of different substrate dopings and guard-contact configurations will be demonstrated.
A Simple Model of Digital Noise Injection for Mixed-Signal Design in Digital CMOS Technology  (PDF, 1108 kB)

Microelectronics industry is geared toward an ever expanding use of digital circuits, because digital data is easy to process and store and digital design can take immediate advantage of technology scaling down. Such a technological trend will enable CMOS circuits for digital signal processing (DSP) to be developed for a broad variety of applications.

Market trend is towards integration of home-based services and hand-held electronic products. Communication systems are playing the leading role, offering new broadband services, either wireless or wire-based. Low-cost and high-performance circuits are required to be competitive in a more and more demanding consumer market. Single chip solutions reduce costs and power consumption, and increase reliability. Moreover, they can help to reduce weight and size of hand-held electronic products.

In mixed systems, performance limitations come mainly from the analog section which interfaces the digital processing core with the external world. In addition to the difficult task of designing state-of-the-art analog-digital interfaces, mixed analog-digital microintegrated circuits offer an additional challenging aspect. In such ICs, coupling from switching digital nodes and noisy power supplies to analog devices through the common substrate is a serious limitation to analog circuit performance.

This presentation illustrates the problems arising when designing accurate analog-digital interfaces to be integrated into the same chip together with a digital processor. The generation of digital disturbs, their propagation through the substrate and their effects on analog devices are considered, with a particular emphasis on integrated circuits realized on heavily-doped substrate, where traditional shielding is less effective.

Techniques to reduce analog-digital crosstalk are discussed. Reduction of the effects coming from digital noise can be achieved in four different ways:

  • by reducing the disturb injected into the substrate by means of a low-power digital design;
  • by inserting shields between analog and digital sections, to attenuate the injected noise;
  • by designing analog structures which have low sensitivity to digital noise;
  • by using suitable assembling techniques.
To provide the designer with an adequate tool for a successful design, a  simple model for digital noise injection has to be developed. This should be used in conventional SPICE simulations to evaluate design robustness. Indeed, SPICE-level description and analysis is still considered the best solution for noise sensistive circuits. The developed model has to be verified and the values of parasitic elements have to be extracted. This can be done by designing a mixed test chip, with a digital section to inject switching noise into the substrate, and a noise-sensitive analog section to collect digital noise.

Experimental results on a test chip are presented to validate the modeling approach.


A Design Experiment for Measuring and Modeling Digital Substrate Noise Generation  (PDF, 1436 kB)
In this presentation we would like to show analysis, measurement and  modeling results of the substrate noise generation of a CMOS digital  test circuit. This digital test circuit is integrated with a substrate  noise sensor on a low-ohmic epi-type substrate.

First, the substrate noise generation of this test circuit has  been  measured, using the on-chip substrate noise sensor, both in the time and frequency domain. The frequency domain measurements show that most  substrate noise is generated at multiples of the digital clock  frequency, with noise peaks up to 40 dB above the noise floor. Next, a  SPICE-level substrate model has been added to the original digital  circuit description and the noise generation has been simulated. These results match very well with the measurements. Finally, using the SPICE  circuit and substrate model, an analysis has been done on the dominant  generation mechanism of the substrate noise generation, as function of  the package parasitics. Depending on these parasitics, either the noise generation of the MOSFETs themselves or the noise coupling from the digital power supply is the dominant source of substrate noise generation.


Substrate Noise Induced Locking of VCOs: Simulation and Circuit Development  (PDF, 217 kB)

On a high speed high precision converter product with extensive on board synchronous digital post processing of 1m transistors, a PLL operating
asynchronously to the level of 25ppm showed excessive susceptance to the on-chip substrate noise. The problem was traced to the VCO of the PLL, which was locking to the substrate noise frequency. This paper deals with the difficulties encountered with substrate locking and successes of recreating the problem in simulation. Architecture and circuit strategies to alleviate and/or to prevent its occurrence are also investigated.
The paper  also describes workarounds suitable for certain applications and concludes with silicon evaluation results.

Last update: January 21, 2001