CSIC: Instituto de Microelectrónica de Sevilla (IMSE-CNM)


				Instituto de Microelectrónica de Sevilla

CATÁLOGO DE CHIPS

DETECTORS-2

Team: E. Roca, S. Espejo, R. Domínguez-Castro and A. Rodríguez-Vázquez.

Date: 1998

Physical Data	0.8 µ m CMOS n-well, single-poly, double metal 5 mm² (including pads)
Electrical Data	Discrete visible detectors, 16x16 arrays of visible detectors. 5V power supply
Applications	Electro-optical characterization of visible detectors fabricated in a CMOS process Statistical characterization of each type of detector located in the arrays

This design is intended to characterize the different types of visible detectors available in an standard CMOS process. It includes the same structures concerning visible detectors as the DETECTORS-1 prototype. Minor changes have been included to improve the measurement conditions. Also test structures including two different different pixel designs to be used in imaging camaras are placed in the chip.

Visible detectors

A detailed description of the different types of detectors included in the design is given in the description of the DETECTORS-1 prototype.

Pixel test structures

Two different designs of a passive pixel have been included to study their behaviour under different types of illumination conditions in order to select the better structure for imaging applications.

Images List:

Figure 1: Die microphotograph

Sede: Avda. Reina Mercedes, s/n (Edificio CICA). Sevilla. E-41012 (ESPAÑA). TEL: +34 95 505 6666. FAX:(+34) 95 505 6686